Invention Grant
- Patent Title: Capacitive MEMS sensor device
- Patent Title (中): 电容式MEMS传感器装置
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Application No.: US12301163Application Date: 2007-05-14
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Publication No.: US08134375B2Publication Date: 2012-03-13
- Inventor: Jeroen Van Den Boom
- Applicant: Jeroen Van Den Boom
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP06114074 20060517
- International Application: PCT/IB2007/051820 WO 20070514
- International Announcement: WO2007/132422 WO 20071122
- Main IPC: G01R27/28
- IPC: G01R27/28 ; H04R11/04

Abstract:
The present invention relates to a capacitive MEMS sensor device for sensing a mechanical quantity. To provide such a capacitive MEMS sensor device which enables fast recovery from (near) sticking after a mechanical overload situation it is proposed that the sensor device comprises: —a first bias voltage unit (V1) for supplying a first bias voltage (Vbias 1) to a first plate of said MEMS sensing element, —a second bias voltage unit (V2) for supplying a second bias voltage (Vbias2) to the second plate of said MEMS sensing element, —a signal processing (20) unit for processing said electrical quantity into an output signal (VOUT), —a comparator unit (21) for comparing said output (VOUT) signal to a reference signal (Vref) for detection of an overload condition of said MEMS sensing element (10) and for outputting a comparator signal, —a control unit (22) for controlling the discharge of said MEMS sensing element (10) in case of an overload condition signalled by said comparator signal by connecting, in case of an overload condition, said first plate to a first discharge terminal (D) during a first time interval (T1) and said second plate to a second discharge terminal (D) during a second time interval (T2).
Public/Granted literature
- US20100013501A1 CAPACITIVE MEMS SENSOR DEVICE Public/Granted day:2010-01-21
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