Invention Grant
- Patent Title: Test probe structure
- Patent Title (中): 测试探头结构
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Application No.: US12433217Application Date: 2009-04-30
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Publication No.: US08134380B2Publication Date: 2012-03-13
- Inventor: Yung Hsin Kuo
- Applicant: Yung Hsin Kuo
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G01R31/00
- IPC: G01R31/00 ; G01R31/20

Abstract:
The present disclosure provides a method for testing an integrated circuit having a load impedance. The method includes generating a first test signal having a first frequency and a second test signal having a second frequency, wherein the second frequency is greater than the first frequency, transmitting the first test signal to a substrate having a board circuit operable to process the first signal, transmitting the second test signal to a substrate, wherein the substrate includes an impedance matching circuit operable to transform the load impedance of the integrated circuit into a desired impedance for the second frequency, and sending the first and second test signals to the integrated circuit via the substrate.
Public/Granted literature
- US20100127721A1 TEST PROBE STRUCTURE Public/Granted day:2010-05-27
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