Invention Grant
US08134388B2 Low EMC/EMI emissions' gate driver for wide supply voltage ranges 有权
用于宽电源电压范围的低EMC / EMI发射门极驱动器

Low EMC/EMI emissions' gate driver for wide supply voltage ranges
Abstract:
A method controls a power MOS transistor having a control terminal and a load path, the load path connected in series with a load between voltage supply terminals, wherein a power supply voltage between the voltage supply terminals imposes a load voltage across the load and a load path voltage across the load path of the power MOS transistor. The method includes generating a control current for the control terminal during a switching process when the power MOS transistor changes switching states. The control current is dependent on the power supply voltage and on at least one of the group consisting of the load path voltage and the load voltage.
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