Invention Grant
US08134388B2 Low EMC/EMI emissions' gate driver for wide supply voltage ranges
有权
用于宽电源电压范围的低EMC / EMI发射门极驱动器
- Patent Title: Low EMC/EMI emissions' gate driver for wide supply voltage ranges
- Patent Title (中): 用于宽电源电压范围的低EMC / EMI发射门极驱动器
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Application No.: US11505638Application Date: 2006-08-17
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Publication No.: US08134388B2Publication Date: 2012-03-13
- Inventor: Fabrizio Cortigiani , Franco Mignoli , Gianluca Ragonesi , Silvia Solda
- Applicant: Fabrizio Cortigiani , Franco Mignoli , Gianluca Ragonesi , Silvia Solda
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Maginot, Moore & Beck
- Priority: EP05017890 20050817
- Main IPC: H03K3/00
- IPC: H03K3/00

Abstract:
A method controls a power MOS transistor having a control terminal and a load path, the load path connected in series with a load between voltage supply terminals, wherein a power supply voltage between the voltage supply terminals imposes a load voltage across the load and a load path voltage across the load path of the power MOS transistor. The method includes generating a control current for the control terminal during a switching process when the power MOS transistor changes switching states. The control current is dependent on the power supply voltage and on at least one of the group consisting of the load path voltage and the load voltage.
Public/Granted literature
- US20070040542A1 Low EMC/EMI emissions' gate driver for wide supply voltage ranges Public/Granted day:2007-02-22
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