Invention Grant
- Patent Title: Immersion lithography using hafnium-based nanoparticles
- Patent Title (中): 使用铪基纳米粒子进行浸渍光刻
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Application No.: US12035963Application Date: 2008-02-22
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Publication No.: US08134684B2Publication Date: 2012-03-13
- Inventor: Paul A. Zimmerman , Jeffrey Byers
- Applicant: Paul A. Zimmerman , Jeffrey Byers , Carita Simons, legal representative
- Applicant Address: US TX Austin US TX Austin
- Assignee: Sematech, Inc.,Intel Corporation
- Current Assignee: Sematech, Inc.,Intel Corporation
- Current Assignee Address: US TX Austin US TX Austin
- Agency: Fulbright & Jaworski L.L.P.
- Main IPC: G03B27/42
- IPC: G03B27/42

Abstract:
Method, apparatus, and composition of matter suited for use with, for example, immersion lithography. The composition of matter includes hafnium dioxide nanoparticles having diameters less than or equal to about 15 nanometers. The apparatus includes the composition of matter, a light source, a platform for supporting a work piece, and a lens element. The method includes providing a light source, providing a lens element between the light source and a work piece, providing the composition of matter between the lens element and the work piece, and exposing the work piece to light provided by the light source by passing light from the light source through the lens element and the composition of matter to the work piece.
Public/Granted literature
- US20090213346A1 IMMERSION LITHOGRAPHY USING HAFNIUM-BASED NANOPARTICLES Public/Granted day:2009-08-27
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