Invention Grant
- Patent Title: Semiconductor device having an ESD protection circuit
- Patent Title (中): 具有ESD保护电路的半导体器件
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Application No.: US12926177Application Date: 2010-10-29
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Publication No.: US08134814B2Publication Date: 2012-03-13
- Inventor: Masakazu Ikegami
- Applicant: Masakazu Ikegami
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2007-70133 20070319
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H03B5/32
Abstract:
A semiconductor integrated circuit, includes an operational amplifier including a first input terminal, a second input terminal, and an output terminal, a first transistor which has a source-drain route connected between an external terminal and a first voltage, and a gate terminal connected to the output terminal of the operational amplifier; and a second transistor which has a source-drain route connected between the first input terminal of the operational amplifier and the first voltage, and a gate terminal connected to the output terminal of the operational amplifier.
Public/Granted literature
- US20110043295A1 Semiconductor device having an ESD protection circuit Public/Granted day:2011-02-24
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