Invention Grant
- Patent Title: Decoupling capacitors
- Patent Title (中): 去耦电容
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Application No.: US12071278Application Date: 2008-02-19
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Publication No.: US08134824B2Publication Date: 2012-03-13
- Inventor: Marlin Frederick , David Paul Clark , Jean-Luc Pelloie , Yew Keong Chong
- Applicant: Marlin Frederick , David Paul Clark , Jean-Luc Pelloie , Yew Keong Chong
- Applicant Address: GB Cambridge
- Assignee: ARM Limited
- Current Assignee: ARM Limited
- Current Assignee Address: GB Cambridge
- Agency: Nixon & Vanderhye P.C.
- Main IPC: H01G4/228
- IPC: H01G4/228

Abstract:
A decoupling capacitor is disclosed that has an n-type portion and a p-type portion in a semiconductor. The decoupling capacitor is formed of an NFET transistor and a PFET transistor, the PFET transistor being substantially formed in the n-type portion and the NFET transistor being substantially formed in the p-type portion, a boundary between the n-type portion and the p-type portion being substantially straight. The transistors are arranged such that a source and drain of the PFET transistor are connected to a high voltage rail and a source and drain of the NFET transistor are connected to a low voltage rail.
Public/Granted literature
- US20090207552A1 Decoupling capacitors Public/Granted day:2009-08-20
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