Invention Grant
- Patent Title: Ferroelectric memory and method for testing the same
- Patent Title (中): 铁电存储器和测试方法相同
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Application No.: US12404157Application Date: 2009-03-13
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Publication No.: US08134855B2Publication Date: 2012-03-13
- Inventor: Ryu Ogiwara , Daisaburo Takashima
- Applicant: Ryu Ogiwara , Daisaburo Takashima
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Knobbe Martens Olson & Bear, LLP
- Priority: JPP2008-65693 20080314
- Main IPC: G11C11/22
- IPC: G11C11/22
Abstract:
A driver circuit and a precharge circuit apply, in a test mode, a fixed potential to a bit-line, while applying a second plate-line voltage to a plate-line. Then, the bit-line is switched from a first bit-line precharge potential to a floating state, and the plate-line voltage is raised from the second plate-line voltage to a plate-line voltage.
Public/Granted literature
- US20090231903A1 FERROELECTRIC MEMORY AND METHOD FOR TESTING THE SAME Public/Granted day:2009-09-17
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