Invention Grant
- Patent Title: Semiconductor memory device and semiconductor device
- Patent Title (中): 半导体存储器件和半导体器件
-
Application No.: US11958744Application Date: 2007-12-18
-
Publication No.: US08134862B1Publication Date: 2012-03-13
- Inventor: Takayuki Ikeda , Yoshiyuki Kurokawa
- Applicant: Takayuki Ikeda , Yoshiyuki Kurokawa
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2006-349377 20061226
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
An object is to provide a semiconductor memory device which holds data of an SRAM or a flip-flop circuit and holds data in the SRAM while electric power is not supplied from a reader or electric power is not enough, without changing a battery for driving a power supply corresponding to deterioration of the battery with time, and a semiconductor device provided with the semiconductor memory device. An SRAM cell, a decoder connected to the SRAM cell through a word line, a read/write circuit connected to the SRAM cell through the data line, and a power storage unit connected to the SRAM cell are provided. The power storage unit is charged when data is written to or read from the SRAM cell through the data line.
Public/Granted literature
- US20120069637A1 SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2012-03-22
Information query