Invention Grant
US08134872B2 Apparatus and methods for programming multilevel-cell NAND memory devices
有权
用于编程多电平单元NAND存储器件的装置和方法
- Patent Title: Apparatus and methods for programming multilevel-cell NAND memory devices
- Patent Title (中): 用于编程多电平单元NAND存储器件的装置和方法
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Application No.: US12552601Application Date: 2009-09-02
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Publication No.: US08134872B2Publication Date: 2012-03-13
- Inventor: Frankie F. Roohparvar
- Applicant: Frankie F. Roohparvar
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
Methods and apparatus are provided. A first data value is read from a first memory cell and is stored. An attempt is made to add a second data value to the first memory cell. If the attempt to add the second data value to the first memory cell is unsuccessful, the first data value and the second data value are written to one or more other memory cells.
Public/Granted literature
- US20090327594A1 APPARATUS AND METHODS FOR PROGRAMMING MULTILEVEL-CELL NAND MEMORY DEVICES Public/Granted day:2009-12-31
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