Invention Grant
- Patent Title: High-speed compression architecture for memory
- Patent Title (中): 内存高速压缩架构
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Application No.: US12625034Application Date: 2009-11-24
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Publication No.: US08134885B2Publication Date: 2012-03-13
- Inventor: Jeffrey T. Feng
- Applicant: Jeffrey T. Feng
- Applicant Address: US NH Nashua
- Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee Address: US NH Nashua
- Agency: Finch & Maloney, PLLC
- Agent Neil F. Maloney
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
Memory design techniques are disclosed that provide a high compression ratio at no loss in speed. The techniques can be embodied, for instance, in heterojunction bipolar transistor (HBT) based ROMs. By embedding compression logic (e.g., XOR) functionality directly into the address decoders and sense amplifiers of the memory device, a high compression ratio is achieved at no loss in speed. For example, the logic-based compression functionality can be directly implemented into the buffers that form the address decoder as well as the sense amplifiers.
Public/Granted literature
- US20110121867A1 HIGH-SPEED COMPRESSION ARCHITECTURE FOR MEMORY Public/Granted day:2011-05-26
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