Invention Grant
US08135903B1 Non-volatile semiconductor memory compressing data to improve performance
有权
非易失性半导体存储器压缩数据以提高性能
- Patent Title: Non-volatile semiconductor memory compressing data to improve performance
- Patent Title (中): 非易失性半导体存储器压缩数据以提高性能
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Application No.: US12610129Application Date: 2009-10-30
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Publication No.: US08135903B1Publication Date: 2012-03-13
- Inventor: Alan Chingtao Kan
- Applicant: Alan Chingtao Kan
- Applicant Address: US CA Irvine
- Assignee: Western Digital Technologies, Inc.
- Current Assignee: Western Digital Technologies, Inc.
- Current Assignee Address: US CA Irvine
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
A non-volatile semiconductor memory is disclosed comprising a plurality of paired pages, wherein each pair comprises a first page and a second page. A write command is received from a host comprising write data and a write address. The write address is mapped to a physical address of a selected one of the paired memory pages. The write data is compressed to generate compressed data, and when the compressed data fits in one of the pages of the selected pair, the compressed data is stored in the first page and in the second page of the selected pair in an S-mode.
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