Invention Grant
- Patent Title: Electrical coupling of wafer structures
- Patent Title (中): 晶片结构的电耦合
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Application No.: US12638424Application Date: 2009-12-15
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Publication No.: US08138062B2Publication Date: 2012-03-20
- Inventor: Lianjun Liu , Lisa H. Karlin , Alan J. Magnus
- Applicant: Lianjun Liu , Lisa H. Karlin , Alan J. Magnus
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent David G. Dolezal; Ranjeev Singh
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
A method for electrically coupling a first wafer with a second wafer is provided. The method includes bonding the first wafer with the second wafer using a bonding material. The method further includes forming an opening in the first wafer in a scribe area of the second wafer to expose a surface of a conductive structure of the second wafer. The method further includes forming a conductive layer overlying the first wafer and the opening in the first wafer such that the conductive layer forms an electrical contact with the conductive structure of the second wafer thereby electrically coupling the first wafer with the second wafer.
Public/Granted literature
- US20110143476A1 ELECTRICAL COUPLING OF WAFER STRUCTURES Public/Granted day:2011-06-16
Information query
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