Invention Grant
- Patent Title: Radiation-emitting semiconductor component and method for producing the semiconductor component
- Patent Title (中): 辐射发射半导体元件及半导体元件的制造方法
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Application No.: US11567977Application Date: 2006-12-07
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Publication No.: US08138511B2Publication Date: 2012-03-20
- Inventor: Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Härle , Marianne Ortmann , Uwe Strauss , Johannes Völkl , Ulrich Zehnder
- Applicant: Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Härle , Marianne Ortmann , Uwe Strauss , Johannes Völkl , Ulrich Zehnder
- Applicant Address: DE Munich
- Assignee: Osram AG
- Current Assignee: Osram AG
- Current Assignee Address: DE Munich
- Agency: Fish & Richardson P.C.
- Priority: DE10111501 20010309
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.
Public/Granted literature
- US20080179380A1 RADIATION-EMITTING SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING THE SEMICONDUCTOR COMPONENT Public/Granted day:2008-07-31
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