Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12832177Application Date: 2010-07-08
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Publication No.: US08138609B2Publication Date: 2012-03-20
- Inventor: Michio Horiuchi , Yasue Tokutake , Yuichi Matsuda , Tomoo Yamasaki , Yuta Sakaguchi
- Applicant: Michio Horiuchi , Yasue Tokutake , Yuichi Matsuda , Tomoo Yamasaki , Yuta Sakaguchi
- Applicant Address: JP Nagano
- Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Nagano
- Agency: IPUSA, PLLC
- Priority: JP2009-168596 20090717
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
In a semiconductor device, a substrate includes a plurality of line conductors which penetrate the substrate from a top surface to a bottom surface of the substrate. A semiconductor chip is secured in a hole of the substrate. A first insulating layer is formed on the top surfaces of the substrate and the semiconductor chip. A first wiring layer is formed on the first insulating layer and electrically connected via through holes of the first insulating layer to the semiconductor chip and some line conductors exposed to one of the through holes. A second insulating layer is formed on the bottom surfaces of the substrate and the semiconductor chip. A second wiring layer is formed on the second insulating layer and electrically connected via a through hole of the second insulating layer to some line conductors exposed to the through hole.
Public/Granted literature
- US20110012266A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2011-01-20
Information query
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