TFT device with channel region above convex insulator portions and source/drain in concave between convex insulator portions

Invention Grant

US08143118B2 TFT device with channel region above convex insulator portions and source/drain in concave between convex insulator portions 有权

Title translation: TFT器件，其沟槽区域位于凸形绝缘体部分之上，并且在凸形绝缘体部分之间的凹陷中的源极/漏极

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Patent Title: TFT device with channel region above convex insulator portions and source/drain in concave between convex insulator portions
Patent Title (中): TFT器件，其沟槽区域位于凸形绝缘体部分之上，并且在凸形绝缘体部分之间的凹陷中的源极/漏极
Application No.: US12073618

Application Date: 2008-03-07
Publication No.: US08143118B2

Publication Date: 2012-03-27
Inventor: Hideto Ohnuma , Atsuo Isobe , Hiromichi Godo
Applicant: Hideto Ohnuma , Atsuo Isobe , Hiromichi Godo
Applicant Address: JP Atsuhi-shi, Kanagawa-ken
Assignee: Semiconductor Energy Laboratory Co., Ltd.
Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
Current Assignee Address: JP Atsuhi-shi, Kanagawa-ken
Agency: Robinson Intellectual Property Law Office, P.C.
Agent Eric J. Robinson
Priority: JP2007-058582 20070308
Main IPC: H01L21/84
IPC: H01L21/84

TFT device with channel region above convex insulator portions and source/drain in concave between convex insulator portions

Abstract:

A semiconductor device having a highly responsive thin film transistor (TFT) with low subthreshold swing and suppressed decrease in the on-state current and a manufacturing method thereof are demonstrated. The TFT of the present invention is characterized by its semiconductor layer where the thickness of the source region or the drain region is larger than that of the channel formation region. Manufacture of the TFT is readily achieved by the formation of an amorphous semiconductor layer on a projection portion and a depression portion, which is followed by subjecting the melting process of the semiconductor layer, resulting in the formation of a crystalline semiconductor layer having different thicknesses. Selective addition of impurity to the thick portion of the semiconductor layer provides a semiconductor layer in which the channel formation region is thinner than the source or drain region.

Abstract(Chinese):

示出了具有低亚阈值摆动和抑制导通电流下降的高响应性薄膜晶体管（TFT）的半导体器件及其制造方法。本发明的TFT的特征在于其源极区域或漏极区域的厚度大于沟道形成区域的厚度的半导体层。通过在突起部分和凹陷部分上形成非晶半导体层来容易地实现TFT的制造，随后对半导体层进行熔化处理，形成具有不同厚度的晶体半导体层。选择性地向半导体层的厚部分添加杂质提供了沟道形成区域比源区或漏区更薄的半导体层。

Public/Granted literature

US20080220570A1 Semiconductor device and manufacturing method thereof Public/Granted day:2008-09-11

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84	.....衬底不是半导体的，例如绝缘体