Invention Grant
- Patent Title: Waveguide amplifier in a sputtered film of erbium-doped gallium lanthanum sulfide glass
- Patent Title (中): 掺铒镓镧硫化物玻璃的溅射膜中的波导放大器
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Application No.: US11673624Application Date: 2007-02-12
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Publication No.: US08144392B2Publication Date: 2012-03-27
- Inventor: Jasbinder S Sanghera , Ishwar D Aggarwal , Jesse A. Frantz , Leslie Brandon Shaw
- Applicant: Jasbinder S Sanghera , Ishwar D Aggarwal , Jesse A. Frantz , Leslie Brandon Shaw
- Applicant Address: US DC Washington
- Assignee: The United States of America as represented by the Secretary of the Navy
- Current Assignee: The United States of America as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agent Amy Ressing; Suresh Koshy
- Main IPC: H03S3/063
- IPC: H03S3/063 ; H03S3/16 ; H04B10/12

Abstract:
A waveguide amplifier, disposed on a substrate, composed of sputtered film of chalcogenide glass doped with Erbium is disclosed. The amplifier includes a substrate, a thick film of chalcogenide glass disposed on the substrate, a pumping device, and an optical combining device, wherein the waveguide is operable to amplify the optically combined signal. This type of amplifier has been shown to be compact and cost-effective, in addition to being transparent in the mid-IR range as a result of the low phonon energy of chalcogenide glass.
Public/Granted literature
- US20080192332A1 Waveguide Amplifier in a Sputtered Film of Erbium-Doped Gallium Lanthanum Sulfide Glass Public/Granted day:2008-08-14
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