Invention Grant
US08146436B2 Silicon sensing structure to detect through-plane motion in a plane of material with thermal expansion substantially different from that of silicon
有权
用于检测具有与硅的热膨胀基本上不同的材料平面中的贯通平面运动的硅检测结构
- Patent Title: Silicon sensing structure to detect through-plane motion in a plane of material with thermal expansion substantially different from that of silicon
- Patent Title (中): 用于检测具有与硅的热膨胀基本上不同的材料平面中的贯通平面运动的硅检测结构
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Application No.: US12239985Application Date: 2008-09-29
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Publication No.: US08146436B2Publication Date: 2012-04-03
- Inventor: James Tjan-Meng Suminto , Leslie Bruce Wilner
- Applicant: James Tjan-Meng Suminto , Leslie Bruce Wilner
- Applicant Address: US CA San Juan Capistrano
- Assignee: Meggitt (San Juan Capistrano), Inc.
- Current Assignee: Meggitt (San Juan Capistrano), Inc.
- Current Assignee Address: US CA San Juan Capistrano
- Agency: Goodwin Procter LLP
- Agent Paul Davis
- Main IPC: G01L9/06
- IPC: G01L9/06
Abstract:
A pressure transducer is provided that has a transducer body with a rim, a diaphragm that deflects in response to pressure and a sensor bonded to the diaphragm at the rim and at a center of the diaphragm. The sensor detects deflection of the metal diaphragm. The sensor and diaphragm are made of different materials. A thermal expansion difference between the sensor and the diaphragm is accommodated by flexures in the sensor that accept relative motion in a radial direction of the metal diaphragm with little effect on a sensitivity of the silicon structure to motion in an axial direction of the diaphragm.
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