Invention Grant
US08147657B2 Sputtering device and film forming method 有权
溅射装置和成膜方法

Sputtering device and film forming method
Abstract:
A sputtering apparatus according to the present invention is provided with first to fourth targets. The first and the second targets are disposed so that their surfaces face each other. The third and the fourth targets are also disposed so that their surfaces face each other. When a dielectric film is formed, sputtering is alternately performed on the first and the second targets and on the third and the fourth targets. When sputtering is performed on two of the targets having surfaces that face each other, the remaining two targets function as a ground. As a result, abnormal discharges are inhibited.
Public/Granted literature
Information query
Patent Agency Ranking
0/0