Invention Grant
- Patent Title: Sputtering device and film forming method
- Patent Title (中): 溅射装置和成膜方法
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Application No.: US12136313Application Date: 2008-06-10
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Publication No.: US08147657B2Publication Date: 2012-04-03
- Inventor: Satoru Takasawa , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi
- Applicant: Satoru Takasawa , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi
- Applicant Address: JP Chigasaki-shi
- Assignee: Ulvac, Inc.
- Current Assignee: Ulvac, Inc.
- Current Assignee Address: JP Chigasaki-shi
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2006-16405 20060125
- Main IPC: C23C14/35
- IPC: C23C14/35

Abstract:
A sputtering apparatus according to the present invention is provided with first to fourth targets. The first and the second targets are disposed so that their surfaces face each other. The third and the fourth targets are also disposed so that their surfaces face each other. When a dielectric film is formed, sputtering is alternately performed on the first and the second targets and on the third and the fourth targets. When sputtering is performed on two of the targets having surfaces that face each other, the remaining two targets function as a ground. As a result, abnormal discharges are inhibited.
Public/Granted literature
- US20080245657A1 SPUTTERING DEVICE AND FILM FORMING METHOD Public/Granted day:2008-10-09
Information query
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