Invention Grant
- Patent Title: One hundred millimeter single crystal silicon carbide wafer
- Patent Title (中): 一百毫米单晶碳化硅晶圆
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Application No.: US12772254Application Date: 2010-05-03
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Publication No.: US08147991B2Publication Date: 2012-04-03
- Inventor: Jason Ronald Jenny , David Phillip Malta , Hudson McDonald Hobgood , Stephan Georg Mueller , Mark Brady , Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov
- Applicant: Jason Ronald Jenny , David Phillip Malta , Hudson McDonald Hobgood , Stephan Georg Mueller , Mark Brady , Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Moore & Van Allen PLLC
- Agent Steven B. Phillips
- Main IPC: B32B19/00
- IPC: B32B19/00 ; H01L31/0312
Abstract:
A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.
Public/Granted literature
- US20110024766A1 ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER Public/Granted day:2011-02-03
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