Invention Grant
US08148051B2 Method and system for manufacturing openings on semiconductor devices
有权
用于在半导体器件上制造开口的方法和系统
- Patent Title: Method and system for manufacturing openings on semiconductor devices
- Patent Title (中): 用于在半导体器件上制造开口的方法和系统
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Application No.: US12143730Application Date: 2008-06-20
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Publication No.: US08148051B2Publication Date: 2012-04-03
- Inventor: Tzong-Hsien Wu , Chao-Lung Lo
- Applicant: Tzong-Hsien Wu , Chao-Lung Lo
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX International Co., Ltd.
- Current Assignee: MACRONIX International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Main IPC: G03F7/26
- IPC: G03F7/26

Abstract:
A method and system to form openings comprises an exposure apparatus and a mask to selectively expose a semiconductor substrate to a radiation source to transfer assist feature patterns and primary feature patterns to a photosensitive layer of the substrate. A heating apparatus eliminates the assist features by heating the substrate and shrinking the primary features. The patterns on the photosensitive layer are transferred to a layer under the photosensitive layer by an etching process.
Public/Granted literature
- US20090314965A1 Method and System for Manufacturing Openings on Semiconductor Devices Public/Granted day:2009-12-24
Information query
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