Invention Grant
US08148176B2 Methods for distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrate
有权
用于将一组高掺杂区域与硅衬底上的一组轻掺杂区域区分开的方法
- Patent Title: Methods for distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrate
- Patent Title (中): 用于将一组高掺杂区域与硅衬底上的一组轻掺杂区域区分开的方法
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Application No.: US12544713Application Date: 2009-08-20
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Publication No.: US08148176B2Publication Date: 2012-04-03
- Inventor: Maxim Kelman , Giuseppe Scardera
- Applicant: Maxim Kelman , Giuseppe Scardera
- Applicant Address: US CA Sunnyvale
- Assignee: Innovalight, Inc.
- Current Assignee: Innovalight, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Foley & Lardner LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method of distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrate is disclosed. The method includes providing the silicon substrate, the silicon substrate configured with the set of lightly doped regions and the set of highly doped regions. The method further includes illuminating the silicon substrate with an electromagnetic radiation source, the electromagnetic radiation source transmitting a wavelength of light above about 1100 nm. The method also includes measuring a wavelength absorption of the set of lightly doped regions and the set of heavily doped regions with a sensor, wherein for any wavelength above about 1100 nm, the percentage absorption of the wavelength in the lightly doped regions is substantially less than the percentage absorption of the wavelength in the heavily doped regions.
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