Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
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Application No.: US12984184Application Date: 2011-01-04
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Publication No.: US08148196B2Publication Date: 2012-04-03
- Inventor: Min-Hsun Hsieh
- Applicant: Min-Hsun Hsieh
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Ditthavong Mori & Steiner, P.C.
- Priority: TW96120457A 20070606
- Main IPC: H01L33/60
- IPC: H01L33/60

Abstract:
This invention discloses a light emitting semiconductor device including a light-emitting structure and an external optical element. The optical element couples to the light-emitting structure circumferentially. In addition, the refractive index of the external optical element is greater than or about the same as that of a transparent substrate of the light-emitting structure, or in-between that of the transparent substrate and the encapsulant material.
Public/Granted literature
- US20110095326A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2011-04-28
Information query
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