Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
- Patent Title (中): 半导体器件及其制造方法相同
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Application No.: US13115639Application Date: 2011-05-25
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Publication No.: US08148200B2Publication Date: 2012-04-03
- Inventor: Shigeki Tanaka , Kazuto Ogasawara
- Applicant: Shigeki Tanaka , Kazuto Ogasawara
- Applicant Address: JP Kanagwa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagwa
- Agency: Mattingly & Malur, PC
- Priority: JP2008-031543 20080213
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48 ; H01L21/50

Abstract:
A wire short-circuit defect during molding is prevented. A semiconductor device has a tab, a plurality of leads arranged around the tab, a semiconductor chip mounted over the tab, a plurality of wires electrically connecting the electrode pads of the semiconductor chip with the leads, and a molded body in which the semiconductor chip is resin molded. By further stepwise shortening the chip-side tip end portions of the leads as the first edge or side of the principal surface of the semiconductor chip goes away from the middle portion toward the both end portions thereof, and shortening the tip end portions of those of first leads corresponding to the middle portion of the first edge or side of the principal surface which are adjacent to second leads located closer to the both end portions of the first edge or side, the distances between second wires connected to the second leads and the tip end portions of the first leads adjacent to the second leads can be increased. As a result, it is possible to prevent the wire short-circuit defect even when wire sweep occurs due to the flow resistance of a mold resin.
Public/Granted literature
- US20110223719A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2011-09-15
Information query
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