Invention Grant
- Patent Title: Method for providing a self-aligned conductive structure
- Patent Title (中): 提供自对准导电结构的方法
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Application No.: US12259200Application Date: 2008-10-27
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Publication No.: US08148227B2Publication Date: 2012-04-03
- Inventor: Johann Helneder
- Applicant: Johann Helneder
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
An embodiment according to the present invention comprises a method for providing a self-aligned conductive structure comprising providing a first structure on a surface, wherein the first structure comprises a first and a second layer, and providing an intermediate structure on the surface, wherein the intermediate structure at least partially abuts the first structure laterally at a first lateral edge of the first structure. The method further comprises removing at least a part of the second layer, the part being adjacent to the first lateral edge, and providing the conductive structure such that the conductive structure replaces at least the removed part of the second layer and abuts the first lateral edge.
Public/Granted literature
- US20100102364A1 Method for Providing a Self-Aligned Conductive Structure Public/Granted day:2010-04-29
Information query
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