Invention Grant
- Patent Title: Surface patterned topography feature suitable for planarization
- Patent Title (中): 表面图案形貌特征适用于平坦化
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Application No.: US11696829Application Date: 2007-04-05
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Publication No.: US08148228B2Publication Date: 2012-04-03
- Inventor: Sameer Pendharkar , Binghua Hu , Xinfen Celia Chen
- Applicant: Sameer Pendharkar , Binghua Hu , Xinfen Celia Chen
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent John J. Patti; Wade J. Brady, III; Frederick J. Telecky, Jr
- Main IPC: H01L21/8228
- IPC: H01L21/8228
Abstract:
A method for manufacturing a semiconductor device that comprises implanting a first dopant type in a well region of a substrate to form implanted sub-regions that are separated by non-implanted areas of the well region. The method also comprises forming an oxide layer over the well region, such that an oxide-converted first thickness of the implanted sub-regions is greater than an oxide-converted second thickness of the non-implanted areas. The method further comprises removing the oxide layer to form a topography feature on the well region. The topography feature comprises a surface pattern of higher and lower portions. The higher portions correspond to locations of the non-implanted areas and the lower portions correspond to the implanted sub-regions.
Public/Granted literature
- US20080246117A1 SURFACE PATTERNED TOPOGRAPHY FEATURE SUITABLE FOR PLANARIZATION Public/Granted day:2008-10-09
Information query
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