Invention Grant
- Patent Title: Method of fabricating capacitor
- Patent Title (中): 制造电容器的方法
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Application No.: US12344182Application Date: 2008-12-24
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Publication No.: US08148231B2Publication Date: 2012-04-03
- Inventor: Kwan-Woo Do , Kee-Jeung Lee , Deok-Sin Kil , Young-Dae Kim , Jin-Hyock Kim , Kyung-Woong Park , Jeong-Yeop Lee
- Applicant: Kwan-Woo Do , Kee-Jeung Lee , Deok-Sin Kil , Young-Dae Kim , Jin-Hyock Kim , Kyung-Woong Park , Jeong-Yeop Lee
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Lowe Hauptman Ham & Berner, LLP
- Priority: KR10-2008-0081575 20080820
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A semiconductor device and a method of fabricating the same include an electrode having a nickel layer with impurities. The electrode having a nickel layer with impurities can be a gate electrode or a capacitor electrode. The electrode having a nickel layer with impurities may include a combination of a pure nickel layer and a nickel layer with impurities.
Public/Granted literature
- US20100046138A1 ELECTRODE IN SEMICONDUCTOR DEVICE, CAPACITOR AND METHOD OF FABRICATING THE SAME Public/Granted day:2010-02-25
Information query
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