Invention Grant
- Patent Title: Methods of manufacturing semiconductor devices
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12618567Application Date: 2009-11-13
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Publication No.: US08148235B2Publication Date: 2012-04-03
- Inventor: Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
- Applicant: Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/76
- IPC: H01L21/76

Abstract:
Methods of forming air gaps between interconnects of integrated circuits and structures thereof are disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
Public/Granted literature
- US20100144112A1 Methods of Manufacturing Semiconductor Devices Public/Granted day:2010-06-10
Information query
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