Invention Grant
US08148244B2 Lateral growth method for defect reduction of semipolar nitride films
有权
用于半极性氮化物膜缺陷还原的横向生长方法
- Patent Title: Lateral growth method for defect reduction of semipolar nitride films
- Patent Title (中): 用于半极性氮化物膜缺陷还原的横向生长方法
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Application No.: US11486224Application Date: 2006-07-13
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Publication No.: US08148244B2Publication Date: 2012-04-03
- Inventor: Troy J. Baker , Benjamin A. Haskell , James S. Speck , Shuji Nakamura
- Applicant: Troy J. Baker , Benjamin A. Haskell , James S. Speck , Shuji Nakamura
- Applicant Address: US CA Oakland JP
- Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee Address: US CA Oakland JP
- Agency: Gates & Cooper LLP
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
A lateral growth method for defect reduction of semipolar nitride films. The process steps include selecting a semipolar nitride plane and composition, selecting a suitable substrate for growth of the semipolar nitride plane and composition, and applying a selective growth process in which the semipolar nitride nucleates on some areas of the substrate at the exclusion of other areas of the substrate, wherein the selective growth process includes lateral growth of nitride material by a lateral epitaxial overgrowth (LEO), sidewall lateral epitaxial overgrowth (SLEO), cantilever epitaxy or nanomasking.
Public/Granted literature
- US20070015345A1 Lateral growth method for defect reduction of semipolar nitride films Public/Granted day:2007-01-18
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