Invention Grant
- Patent Title: Method for manufacturing semiconductor device for preventing occurrence of short circuit between bit line contact plug and storage node contact plug
- Patent Title (中): 制造用于防止位线接触插头和存储节点接触插塞之间发生短路的半导体装置的方法
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Application No.: US12914318Application Date: 2010-10-28
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Publication No.: US08148250B2Publication Date: 2012-04-03
- Inventor: Hyoung Joon Kim , Ho Yup Kwon , Jeong Hoon Park , Sung Hyun Kim
- Applicant: Hyoung Joon Kim , Ho Yup Kwon , Jeong Hoon Park , Sung Hyun Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2009-0020097 20090310
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method for manufacturing a semiconductor device includes the steps of forming a plug on a semiconductor substrate, forming an insulation layer over the semiconductor substrate having the plug formed thereon, defining a line type trench through a first etching of a partial thickness of the insulation layer; and defining a contact hole through a second etching of a portion of the insulation layer corresponding to the bottom of the trench so as to expose the plug.
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