Invention Grant
- Patent Title: Copper bonding method
- Patent Title (中): 铜接合法
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Application No.: US12541881Application Date: 2009-08-14
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Publication No.: US08148256B2Publication Date: 2012-04-03
- Inventor: François Hébert , Anup Bhalla
- Applicant: François Hébert , Anup Bhalla
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agency: Schein & Cai LLP
- Agent Jingming Cai
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A copper bonding compatible bond pad structure and associated method is disclosed. The device bond pad structure includes a buffering structure formed of regions of interconnect metal and regions of non-conductive passivation material, the buffering structure providing buffering of underlying layers and structures of the device.
Public/Granted literature
- US20100024213A1 COPPER BONDING METHOD Public/Granted day:2010-02-04
Information query
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