Invention Grant
- Patent Title: Plasma treatment apparatus and plasma treatment method
- Patent Title (中): 等离子体处理装置和等离子体处理方法
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Application No.: US12040011Application Date: 2008-02-29
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Publication No.: US08148268B2Publication Date: 2012-04-03
- Inventor: Kohei Sato , Hideaki Kondo , Susumu Tauchi , Akitaka Makino
- Applicant: Kohei Sato , Hideaki Kondo , Susumu Tauchi , Akitaka Makino
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2007-324160 20071217
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461

Abstract:
The invention provides a plasma treatment apparatus or a plasma treatment method having a high productivity while maintaining a stable treatment performance. In a plasma treatment apparatus feeding a plurality of gases fed into the treatment chamber and treating a sample arranged within the treatment chamber by a plasma formed by using the plurality of gases, the plasma treatment apparatus has a plurality of feeding gas lines in which the plurality of gases respectively pass, a plurality of gas flow rate regulators respectively arranged on the feeding gas lines and respectively regulating flow rates of the plurality of gases, and a testing gas flow path coupled to the gas line so as to be arranged outside the treatment chamber and arranging a tester testing a flow rate of a gas from a gas flow rate controller therein, and the plasma treatment apparatus tests the gas flow rate regulator on a gas line corresponding to the gas which is not used for the treatment in the plurality of gases in parallel with the treatment.
Public/Granted literature
- US20090152242A1 PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD Public/Granted day:2009-06-18
Information query
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