Invention Grant
- Patent Title: Magnetic device with integrated magneto-resistive stack
- Patent Title (中): 具有集成磁阻堆叠的磁性装置
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Application No.: US12366011Application Date: 2009-02-05
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Publication No.: US08148709B2Publication Date: 2012-04-03
- Inventor: Bertrand Delaet , Marie-Claire Cyrille , Jean-François Nodin , Véronique Sousa
- Applicant: Bertrand Delaet , Marie-Claire Cyrille , Jean-François Nodin , Véronique Sousa
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Burr & Brown
- Priority: FR0852236 20080403
- Main IPC: H01L47/00
- IPC: H01L47/00

Abstract:
This magnetic device integrates a magneto-resistive stack, the stack comprising at least two layers made out of a ferromagnetic material, separated from each other by a layer of non-magnetic material; and means for causing an electron current to flow perpendicular to the plane of the layers, with at least one integrated nano-contact intended to inject the current into the magneto-resistive stack. The nano-contact is made in a bilayer composed of a solid electrolyte on which has been deposited a soluble electrode composed of a metal that has been at least partially dissolved in the electrolyte.
Public/Granted literature
- US20090250775A1 MAGNETIC DEVICE WITH INTEGRATED MAGNETO-RESISTIVE STACK Public/Granted day:2009-10-08
Information query
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