Invention Grant
US08148710B2 Phase-change memory device using a variable resistance structure 有权
使用可变电阻结构的相变存储器件

Phase-change memory device using a variable resistance structure
Abstract:
A phase-change memory device including a first contact region and a second contact region formed on a semiconductor substrate. A first insulating layer with a first contact hole and a second contact hole is disposed on the semiconductor substrate, exposing the first and second contact regions. A first conductive layer is disposed on the first insulating interlayer to fill the first and the second contact holes. A first protection layer pattern and a lower wiring protection pattern are disposed on the first conductive layer. A first contact with a first electrode and a second contact with a lower wiring are disposed so as to connect the first and second contact regions. A second protection layer with a second electrode is disposed on the first protection layer pattern and the lower wiring protection pattern. A via filled with a phase-change material is disposed between the first electrode and the second electrode.
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