Invention Grant
- Patent Title: Phase-change memory device using a variable resistance structure
- Patent Title (中): 使用可变电阻结构的相变存储器件
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Application No.: US12805824Application Date: 2010-08-20
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Publication No.: US08148710B2Publication Date: 2012-04-03
- Inventor: Suk-Hun Choi , Chang-Ki Hong , Yoon-Ho Son , Jang-Eun Heo
- Applicant: Suk-Hun Choi , Chang-Ki Hong , Yoon-Ho Son , Jang-Eun Heo
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR2005-67366 20050725
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L29/08 ; H01L29/18

Abstract:
A phase-change memory device including a first contact region and a second contact region formed on a semiconductor substrate. A first insulating layer with a first contact hole and a second contact hole is disposed on the semiconductor substrate, exposing the first and second contact regions. A first conductive layer is disposed on the first insulating interlayer to fill the first and the second contact holes. A first protection layer pattern and a lower wiring protection pattern are disposed on the first conductive layer. A first contact with a first electrode and a second contact with a lower wiring are disposed so as to connect the first and second contact regions. A second protection layer with a second electrode is disposed on the first protection layer pattern and the lower wiring protection pattern. A via filled with a phase-change material is disposed between the first electrode and the second electrode.
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