Invention Grant
- Patent Title: Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes
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Application No.: US12419119Application Date: 2009-04-06
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Publication No.: US08148713B2Publication Date: 2012-04-03
- Inventor: Hitoshi Sato , Hirohiko Hirasawa , Roy B. Chung , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- Applicant: Hitoshi Sato , Hirohiko Hirasawa , Roy B. Chung , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.
Public/Granted literature
- US20090250686A1 METHOD FOR FABRICATION OF SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES Public/Granted day:2009-10-08
Information query
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