Low voltage transistors

Invention Grant

US08148718B2 Low voltage transistors 有权

Title translation: 低压晶体管

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Patent Title: Low voltage transistors
Patent Title (中): 低压晶体管
Application No.: US12156547

Application Date: 2008-06-02
Publication No.: US08148718B2

Publication Date: 2012-04-03
Inventor: Peter Asbeck , Lingquan Wang
Applicant: Peter Asbeck , Lingquan Wang
Applicant Address: US CA Oakland
Assignee: The Regents of the University of California
Current Assignee: The Regents of the University of California
Current Assignee Address: US CA Oakland
Agency: Greer, Burns & Crain Ltd.
Main IPC: H01L29/15
IPC: H01L29/15

Abstract:

The invention provides a transistor having a substrate, a structure supported by the substrate including a source, drain, gate, and channel, wherein the source and the channel are made of different materials, and a tunnel junction formed between the source and the channel, whereby the tunnel junction is configured for injecting carriers from the source to the channel.

Abstract(Chinese):

本发明提供一种晶体管，其具有衬底，由衬底支撑的结构，包括源极，漏极，栅极和沟道，其中源极和沟道由不同材料制成，以及形成在源极和沟道之间的隧道结，由此隧道结被配置为将载体从源极注入到通道。

Public/Granted literature

US20090072270A1 Low voltage transistors Public/Granted day:2009-03-19

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02	.按其半导体本体的特征区分的
H01L29/12	..按其构成材料的特征区分的
H01L29/15	... · ·带有周期性或准周期性电势变化的结构，如多量子阱、超晶格（应用于光控制的这种结构入G02F1/017；应用于半导体激光器的入H01S5/34）