Invention Grant
US08148731B2 Films and structures for metal oxide semiconductor light emitting devices and methods
失效
金属氧化物半导体发光器件和方法的薄膜和结构
- Patent Title: Films and structures for metal oxide semiconductor light emitting devices and methods
- Patent Title (中): 金属氧化物半导体发光器件和方法的薄膜和结构
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Application No.: US11846191Application Date: 2007-08-28
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Publication No.: US08148731B2Publication Date: 2012-04-03
- Inventor: Yungryel Ryu , Tae-seok Lee , Henry W. White
- Applicant: Yungryel Ryu , Tae-seok Lee , Henry W. White
- Applicant Address: US CA Simi Valley
- Assignee: Moxtronics, Inc.
- Current Assignee: Moxtronics, Inc.
- Current Assignee Address: US CA Simi Valley
- Agency: Karish & Bjorgum, PC
- Main IPC: H01L33/28
- IPC: H01L33/28
Abstract:
Semiconductor films and structures, such as films and structures utilizing zinc oxide or other metal oxides, and processes for forming such films and structures, are provided for use in metal oxide semiconductor light emitting devices and other metal oxide semiconductor devices, such as ZnO based semiconductor devices.
Public/Granted literature
- US20080073643A1 FILMS AND STRUCTURES FOR METAL OXIDE SEMICONDUCTOR LIGHT EMITTING DEVICES AND METHODS Public/Granted day:2008-03-27
Information query
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