Various structures and methods for improving the performance of trench-shielded power semiconductor devices and the like are described. An exemplary device comprises a semiconductor region having a surface, a first area of the semiconductor region, a well region of a first conductivity type disposed in the semiconductor region and around the first area, and a plurality of trenches extending in a semiconductor region. Each trench haves a first end disposed in a first portion of the well region, a second end disposed in a second portion of the well region, and a middle portion between the first and second ends and disposed in the first area. Each trench further having opposing sidewalls lined with a dielectric layer, and a conductive electrode disposed on at least a portion of the dielectric layer.