Invention Grant
- Patent Title: Compound semiconductor substrate having multiple buffer layers
- Patent Title (中): 具有多个缓冲层的复合半导体衬底
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Application No.: US12659927Application Date: 2010-03-25
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Publication No.: US08148753B2Publication Date: 2012-04-03
- Inventor: Hiroshi Oishi , Jun Komiyama , Kenichi Eriguchi , Yoshihisa Abe , Akira Yoshida , Shunichi Suzuki
- Applicant: Hiroshi Oishi , Jun Komiyama , Kenichi Eriguchi , Yoshihisa Abe , Akira Yoshida , Shunichi Suzuki
- Applicant Address: JP Tokyo
- Assignee: Covalent Materials Corporation
- Current Assignee: Covalent Materials Corporation
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JPP.2009-076840 20090326
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109 ; H01L29/06 ; H01L29/22 ; H01L33/00 ; H01L29/24 ; H01L29/732
Abstract:
The present invention provides a compound semiconductor substrate, including: a single-crystal silicon substrate having a crystal face with (111) orientation; a first buffer layer which is formed on the single-crystal silicon substrate and is constituted of an AlxGa1-xN single crystal (0
Public/Granted literature
- US20100244100A1 Compound semiconductor substrate Public/Granted day:2010-09-30
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