Invention Grant
- Patent Title: Three-dimensional semiconductor devices
- Patent Title (中): 三维半导体器件
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Application No.: US12615424Application Date: 2009-11-10
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Publication No.: US08148763B2Publication Date: 2012-04-03
- Inventor: Sukpil Kim , Yoondong Park , Wonjoo Kim
- Applicant: Sukpil Kim , Yoondong Park , Wonjoo Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2008-0117655 20081125; KR10-2009-0047101 20090528
- Main IPC: H01L27/108
- IPC: H01L27/108

Abstract:
Provided are a three-dimensional semiconductor device and a method of operating the same. The three-dimensional semiconductor device includes: a plurality of word line structures on a substrate; active semiconductor patterns between the plurality of word line structures; and information storage elements between the plurality of word line structures and the active semiconductor patterns. Each of the plurality of word line structures includes a plurality of word lines spaced apart from each other and stacked, and the active semiconductor patterns include electrode regions and channel regions, the electrode regions and the channel regions having different conductive types and being alternately arranged.
Public/Granted literature
- US20100128509A1 Three-Dimensional Semiconductor Devices and Methods of Operating the Same Public/Granted day:2010-05-27
Information query
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