Invention Grant
- Patent Title: Memory device with buried bit line structure
- Patent Title (中): 具有埋地位线结构的存储器件
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Application No.: US11165329Application Date: 2005-06-24
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Publication No.: US08148770B1Publication Date: 2012-04-03
- Inventor: Shankar Sinha , Timothy Thurgate
- Applicant: Shankar Sinha , Timothy Thurgate
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Agency: Harrity & Harrity, LLP
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L23/52 ; H01L29/40 ; H01L27/088 ; H01L21/70 ; H01L23/48 ; H01L21/82 ; H01L21/336 ; H01L21/76 ; H01L21/44 ; H01L29/788
Abstract:
A memory device includes a number of memory cells and a bit line structure coupled to a group of the memory cells. The bit line structure includes an upper portion having a first width, and a lower portion having a second width, where the first width is less than the second width.
Information query
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