Invention Grant
- Patent Title: Transistor with a passive gate
- Patent Title (中): 具有被动门的晶体管
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Application No.: US12210305Application Date: 2008-09-15
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Publication No.: US08148776B2Publication Date: 2012-04-03
- Inventor: Werner Juengling
- Applicant: Werner Juengling
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder
- Main IPC: H01L29/76
- IPC: H01L29/76

Abstract:
Disclosed is a device having a transistor that includes a source, a drain, a channel region extending between the source and the drain, a gate disposed near the channel region, and a conductive member disposed opposite of the channel region from the gate. The conductive member may not overlap the source, the drain, or both the source and the drain.
Public/Granted literature
- US20100066440A1 TRANSISTOR WITH A PASSIVE GATE AND METHODS OF FABRICATING THE SAME Public/Granted day:2010-03-18
Information query
IPC分类: