Invention Grant
US08148776B2 Transistor with a passive gate 有权
具有被动门的晶体管

Transistor with a passive gate
Abstract:
Disclosed is a device having a transistor that includes a source, a drain, a channel region extending between the source and the drain, a gate disposed near the channel region, and a conductive member disposed opposite of the channel region from the gate. The conductive member may not overlap the source, the drain, or both the source and the drain.
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