Invention Grant
- Patent Title: Method and structures of monolithically integrated ESD suppression device
- Patent Title (中): 单片集成ESD抑制器的方法和结构
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Application No.: US12511002Application Date: 2009-07-28
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Publication No.: US08148781B2Publication Date: 2012-04-03
- Inventor: Xiao (Charles) Yang
- Applicant: Xiao (Charles) Yang
- Applicant Address: US CA San Jose
- Assignee: MCube Inc.
- Current Assignee: MCube Inc.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend and Stockton LLP
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L31/0392

Abstract:
This present invention relates in general to protection of integrated circuit chips, and more particularly, to a micromachined suppression device for protecting integrated circuit chips from electrostatic discharges. The proposed ESD suppression device consists of conductive pillars are dispersed in a dielectric material. The gaps between each pillar behave like spark gaps when a high voltage ESD pulse occurs. When the voltage of the pulse reaches the “trigger voltage” these gaps spark over, creating a very low resistance path. In normal operation, the leakage current and the capacitance is very low, due to the physical gaps between the conductive pillars. The proposed ESD suppression device is fabricated using micromachining techniques to be on-chip with device ICs.
Public/Granted literature
- US20100187652A1 METHOD AND STRUCTURES OF MONOLITHICALLY INTEGRATED ESD SUPPRESSION DEVICE Public/Granted day:2010-07-29
Information query
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