Invention Grant
- Patent Title: Pressure sensor and method for manufacturing the pressure sensor
- Patent Title (中): 压力传感器及制造压力传感器的方法
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Application No.: US12588241Application Date: 2009-10-08
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Publication No.: US08148792B2Publication Date: 2012-04-03
- Inventor: Goro Nakatani
- Applicant: Goro Nakatani
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, PC
- Priority: JP2008-262906 20081009
- Main IPC: H01L29/84
- IPC: H01L29/84
Abstract:
A pressure sensor of the present invention includes a lower substrate which has an insulating layer having a through-hole penetrating from one side to the other side, and an active layer formed to have a uniform thickness on the insulating layer and having a portion facing the through-hole as an oscillating portion capable of oscillating in a direction opposing the through-hole; a lower electrode formed on the oscillating portion; an upper substrate arranged opposite to the active layer and having a recess at a portion opposed to the oscillating portion; and an upper electrode formed on the recess.
Public/Granted literature
- US20100090297A1 Pressure sensor and method for manufacturing the pressure sensor Public/Granted day:2010-04-15
Information query
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