Invention Grant
- Patent Title: Three dimensional integrated passive device and method of fabrication
- Patent Title (中): 三维集成无源器件及其制造方法
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Application No.: US12689594Application Date: 2010-01-19
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Publication No.: US08148793B2Publication Date: 2012-04-03
- Inventor: Lianjun Liu
- Applicant: Lianjun Liu
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Meschkow & Gresham, P.L.C.
- Main IPC: H01L21/84
- IPC: H01L21/84
Abstract:
An integrated passive device (20) includes a first wafer (22), a first integrated device (28) formed on a first surface (24) of the wafer (22), and a second integrated device (30) formed on a second surface (26) of the wafer (22), the second surface (26) opposing the first surface (24). A microelectromechanical (MEMS) device (72) includes a second wafer (74) having a MEMS component (76) formed thereon. The integrated passive device (20) and the MEMS device (72) are coupled to form an IPD/MEMS stacked device (70) in accordance with a fabrication process (90). The fabrication process (90) calls for forming (94) the second integrated device (30) on the second surface (26) of the wafer (22), constructing (100) the MEMS component (76) on the wafer (74), coupling (104) the wafers (22, 74), then creating the first integrated device (28) on the first surface (24) of the first wafer (22).
Public/Granted literature
- US20100117767A1 Three Dimensional Integrated Passive Device And Method Of Fabrication Public/Granted day:2010-05-13
Information query
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