Invention Grant
US08148822B2 Bonding pad on IC substrate and method for making the same 有权
IC基板上的接合垫及其制造方法

Bonding pad on IC substrate and method for making the same
Abstract:
A bonding pad structure is fabricated on an integrated circuit (IC) substrate having at least a contact layer on its top surface. A passivation layer covers the top surface of the IC substrate and the contact layer. The passivation layer has an opening exposing a portion of the contact layer. An electrically conductive adhesion/barrier layer directly is bonded to the contact layer. The electrically conductive adhesion/barrier layer extends to a top surface of the passivation layer. A bonding metal layer is stacked on the electrically conductive adhesion/barrier layer.
Public/Granted literature
Information query
Patent Agency Ranking
0/0