Invention Grant
- Patent Title: RF buffer circuit with dynamic biasing
- Patent Title (中): RF缓冲电路具有动态偏置
-
Application No.: US12603379Application Date: 2009-10-21
-
Publication No.: US08149023B2Publication Date: 2012-04-03
- Inventor: Rangarajan Rajagopalan , Mishra Chinmaya
- Applicant: Rangarajan Rajagopalan , Mishra Chinmaya
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Incorporated
- Current Assignee: Qualcomm Incorporated
- Current Assignee Address: US CA San Diego
- Agent Eric Ho
- Main IPC: H03B1/00
- IPC: H03B1/00

Abstract:
An RF buffer circuit for a voltage controlled oscillator (VCO) includes dynamic biasing circuitry to selectively flip the phase of the output voltage waveform. In a CMOS implementation, a PMOS/NMOS pair is employed in an output path. During a high (voltage) swing mode condition, the phase of the output is flipped such that the output waveform is in phase with the voltages appearing at the gates of the PMOS/NMOS pair. The technique thereby reduces peak gate-to-drain voltages and allows for improved reliability of the MOS devices in a configuration amenable to low phase noise and low power consumption.
Public/Granted literature
- US20110089991A1 RF BUFFER CIRCUIT WITH DYNAMIC BIASING Public/Granted day:2011-04-21
Information query