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US08149023B2 RF buffer circuit with dynamic biasing 失效
RF缓冲电路具有动态偏置

RF buffer circuit with dynamic biasing
Abstract:
An RF buffer circuit for a voltage controlled oscillator (VCO) includes dynamic biasing circuitry to selectively flip the phase of the output voltage waveform. In a CMOS implementation, a PMOS/NMOS pair is employed in an output path. During a high (voltage) swing mode condition, the phase of the output is flipped such that the output waveform is in phase with the voltages appearing at the gates of the PMOS/NMOS pair. The technique thereby reduces peak gate-to-drain voltages and allows for improved reliability of the MOS devices in a configuration amenable to low phase noise and low power consumption.
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