Invention Grant
US08149027B2 Circuit with a voltage dependent resistor for controlling an on/off state of a transistor
失效
具有用于控制晶体管的导通/截止状态的电压依赖电阻器的电路
- Patent Title: Circuit with a voltage dependent resistor for controlling an on/off state of a transistor
- Patent Title (中): 具有用于控制晶体管的导通/截止状态的电压依赖电阻器的电路
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Application No.: US12166882Application Date: 2008-07-02
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Publication No.: US08149027B2Publication Date: 2012-04-03
- Inventor: Lawrence F. Cygan , Andrew M. Khan , Curtis M. Williams
- Applicant: Lawrence F. Cygan , Andrew M. Khan , Curtis M. Williams
- Applicant Address: US IL Libertyville
- Assignee: Motorola Mobility, Inc.
- Current Assignee: Motorola Mobility, Inc.
- Current Assignee Address: US IL Libertyville
- Main IPC: H03K3/00
- IPC: H03K3/00

Abstract:
An H-bridge circuit formed from two sub-circuits coupled to each other by a load network across a respective load node of each of the sub-circuits. Each sub-circuit of the two sub-circuits comprises a depletion mode upper transistor with a second electrode coupled to a first electrode of a lower transistor. The load node of the sub-circuit is disposed between the second electrode of the upper transistor and the first electrode of a lower transistor. There is a first voltage supply node coupled to a first electrode of the upper transistor and a second voltage supply node is coupled to a second electrode of the lower transistor. An upper driver transistor selectively couples a gate electrode of the upper transistor to an upper drive voltage node, the upper driver transistor having a control electrode coupled to an upper switched voltage supply circuit. There is also a lower switched voltage supply circuit coupled to a gate electrode of the lower transistor and a voltage dependent non-linear resistor is coupled across the gate electrode and second electrode of the upper transistor. In use, when the lower transistor and upper driver transistor are in a non-conductive state a potential difference across the voltage dependent non-linear resistor is sufficiently small enough to control the upper transistor into a conductive state. Conversely, when the lower transistor and upper driver transistor are in a conductive state the potential difference across the voltage dependent non-linear resistor provides a negative bias to the gate electrode of the upper transistor that has a negative potential sufficient to control the upper transistor into a non-conductive state.
Public/Granted literature
- US20100001701A1 CIRCUIT WITH ONE OR MORE DEPLETION MODE TRANSISTORS Public/Granted day:2010-01-07
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