Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US13231562Application Date: 2011-09-13
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Publication No.: US08149055B2Publication Date: 2012-04-03
- Inventor: Jun Deguchi , Naoki Kobayashi
- Applicant: Jun Deguchi , Naoki Kobayashi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier, Neustadt, L.L.P.
- Priority: JP2009-086572 20090331
- Main IPC: H03F3/45
- IPC: H03F3/45 ; H03F3/04

Abstract:
A semiconductor integrated circuit device constituting an inverting amplifier employs a cascode current source as a current source. In the semiconductor integrated circuit device, a high-potential-side transistor of the cascode current source and a low-potential-side transistor constituting an amplification portion are shared. The configuration can not only make an output impedance of the cascode current source high and improve current source characteristics but also make a minimum potential at a minimum potential point of the amplification portion low and ensure a sufficient power supply voltage margin.
Public/Granted literature
- US20120001696A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2012-01-05
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