Invention Grant
- Patent Title: Thin film transistor substrate and method of manufacturing the same
- Patent Title (中): 薄膜晶体管基板及其制造方法
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Application No.: US13021228Application Date: 2011-02-04
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Publication No.: US08149347B2Publication Date: 2012-04-03
- Inventor: Joon Young Yang
- Applicant: Joon Young Yang
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Morgan, Lewis & Bockius LLP
- Priority: KR10-2006-0135467 20061227
- Main IPC: G02F1/1368
- IPC: G02F1/1368

Abstract:
A method of fabricating a liquid crystal display device includes forming a gate electrode; forming a gate insulator on the gate electrode, an active layer on the gate insulator, and an etch stopper on the active layer; depositing an ohmic contact layer, a first metal layer and a second metal layer on the substrate; etching the ohmic contact layer, and the first and second metal layers to form ohmic contact patterns, and first and second metal patterns including source, drain and pixel electrodes using a single photomask.
Public/Granted literature
- US20110143504A1 THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-06-16
Information query
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