Invention Grant
- Patent Title: Electro-optic silicon modulator
- Patent Title (中): 电光硅调制器
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Application No.: US12552043Application Date: 2009-09-01
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Publication No.: US08149493B2Publication Date: 2012-04-03
- Inventor: Liang Chen
- Applicant: Liang Chen
- Applicant Address: US MA Woburn
- Assignee: Sifotonics Technologies (USA) Inc.
- Current Assignee: Sifotonics Technologies (USA) Inc.
- Current Assignee Address: US MA Woburn
- Agency: Occhiuti Rohlicek & Tsao LLP
- Main IPC: G02F1/03
- IPC: G02F1/03 ; G02B6/10

Abstract:
In a general aspect, a device includes a substrate, a light transmission formed on a top surface of the substrate, a first contact, and a second contact. The light transmission structure includes a first doped region; a second doped region doped oppositely to the first region; a lateral junction between a part of the first doped region and a part of the second doped region, the lateral junction oriented substantially perpendicular to the top surface of the substrate; and a vertical junction between a part of the first doped region and a part of the second doped region, the vertical junction oriented substantially parallel to the top surface of the substrate. The first contact is in electrical contact with the first region and the second contact is in electrical contact with the second region.
Public/Granted literature
- US20100060970A1 ELECTRO-OPTIC SILICON MODULATOR Public/Granted day:2010-03-11
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